DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2496 | MHz |
| Frequency (Max.) | 2690 | MHz |
| Supply Voltage (Typ.) | 48 | V |
| Psat (Typ.) | 49.9 | dBm |
| Power Gain @ 2600 MHz | 15.9 | dB |
| Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
CN
