| Part Number | Package | Band(MHz) | Application | Ppeak(dBm) | Pavg(dBm) | Eff@Pavg(%) | Linear Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|---|
| DMC1G26-10MN | LGA 7mm×7mm | 2500~2700 | Telecom Infrastructure | 39.2 | 30.0 | 46.3 | 29.4 | Engineering Sample | |
| DMC1G35-12MN | LGA 7mm×7mm | 3300~3600 | Telecom Infrastructure | 39.5 | 30.0 | 42.9 | 29.9 | Released Product |
DMC1G26-10MN is a 8 W RF GaN HEMT Module with first generation RF GaN technology from Dynax, which is ideal for small cell applications at frequencies from 2500 MHz to 2700 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 2500 | MHz |
| Frequency (Max.) | 2700 | MHz |
| Supply Voltage (Typ.) | 24 | V |
| Psat (Typ.) | 39.5 | dBm |
| Power Gain @ 2600 MHz | 29.4 | dB |
| Efficiency @ 2600 MHz | 46.3 | % |
| ACPR @ 2600 MHz | -33.0 | dBc |
Note: Above performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 24 V,IDQ_DRIVER = 10 mA, IDQ_CARRIER = 20 mA, VGS_PEAK = - 2.7 V,Single-Carrier W-CDMA, IQ Magnitude Clipping,Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DMC1G35-12MN is a 10 W RF GaN HEMT Module with first generation RF GaN technology from Dynax, which is ideal for small cell applications at frequencies from 3300 MHz to 3600 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 3300 | MHz |
| Frequency (Max.) | 3600 | MHz |
| Supply Voltage (Typ.) | 24 | V |
| Psat (Typ.) | 39.5 | dBm |
| Power Gain @ 3500 MHz | 29.9 | dB |
| Efficiency @ 3500 MHz | 42.9 | % |
| ACPR @ 3500 MHz | -35.5 | dBc |
Note: Above performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink,test condition: VDS = 24 V, IDQ_DRIVER = 10 mA, IDQ_CARRIER = 30 mA,VGS_PEAK = - 3.0 V, Single-Carrier W-CDMA, IQ Magnitude Clipping,Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
CN
