Integrated multi-chip module

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DF1G0015-08N LGA 4mm×4mm 20~1500 8.0 39.4 59.4 17.2 Engineering Sample
DXG2MH50A-50N* LGA 6mm×10mm 4700~5000 50.0 38.8 40.5 28.0 Released Product
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DF1G0015-08N


Brief description for the product

DF1G0015-08N

DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)20MHz
Frequency (Max.)1500MHz
Supply Voltage (Typ.)28V
Psat@325 MHz39.7dBm
Power Gain @ 325 MHz17.5dB
Efficiency @ 325 MHz63.8%

  

Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.


DXG2MH50A-50N*


Brief description for the product

DXG2MH50A-50N*

DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)2496MHz
Frequency (Max.)2690MHz
Supply Voltage (Typ.)48V
Psat (Typ.)49.9dBm
Power Gain @ 2600 MHz15.9dB
Efficiency @ 2600 MHz56.5%
ACPR @ 2600 MHz-32.5dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.