| Part Number | Package | Band(MHz) | Application | Ppeak(dBm) | Pavg(dBm) | Eff@Pavg(%) | Linear Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|---|
| DXG1PH19A-60N | DFN 7mm×6.5mm | 1805~1880 | Telecom Infrastructure | 48.0 | 40.3 | 61.0 | 18.0 | Released Product | |
| DXG1PH22A-120N | DFN 7mm×10mm | 1805~2170 | Telecom Infrastructure | 50.8 | 42.3 | 55.5 | 14.6 | Released Product | |
| DXG2PH27A-100N | DFN 7mm×6.5mm | 2496~2690 | Telecom Infrastructure | 49.9 | 41.3 | 56.5 | 15.9 | Released Product | |
| DXG2PH36A-70N | DFN 7mm×6.5mm | 3300~3800 | Telecom Infrastructure | 48.1 | 39.3 | 53.5 | 15.4 | Released Product | |
| DXG2PH36A-100N | DFN 7mm×6.5mm | 3300~3800 | Telecom Infrastructure | 50.2 | 41.3 | 54.3 | 15.8 | Released Product | |
| DXG2PH50B-20N | DFN 4mm×4.5mm | 4400~5000 | Telecom Infrastructure | 42.8 | 47.8 | 37.0 | 16.0 | In Development | |
| DXG2PH50A-90N | DFN 7mm×6.5mm | 4800~5000 | Telecom Infrastructure | 49.6 | 41.3 | 48.3 | 12.5 | In Development | |
| DXG2PH60B-14N | DFN 4mm×4.5mm | DC~6000 | Telecom Infrastructure | 42.2 | / | 41.8 | 15.4 | Released Product | |
| DXG1PH60P-40N | DFN 7mm×6.5mm | DC~6000 | Telecom Infrastructure | 46.3 | 33.0 | 31.7 | 21.3 | Released Product | |
| DXG1PH60P-60N | DFN 7mm×6.5mm | DC~6000 | Telecom Infrastructure | 47.8 | 40.0 | 55.0 | 19.5 | Released Product |
DXG1PH19A-60N is a 60 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 1805 MHz to 1880 MHz cellular base station applications. It features input matching, wideband and a DFN package.d
Parameter | Value | Unit |
Frequency (Min.) | 1805 | MHz |
Frequency (Max.) | 1880 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 48.0 | dBm |
Power Gain @ 1842 MHz | 18.0 | dB |
Effciency @ 1842 MHz | 61.0 | % |
ACPR @ 1842 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty single-Carrier W-CDMA performance in Dynax’s demo with the device soldered onto the heat sink,
Test condition:
VDD = 48 V, IDQA = 65 mA, VGSB = - 4.7 V, Pout = 10.7 W Avg., Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.
DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 1805 | MHz |
Frequency (Max.) | 2170 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 50.8 | dBm |
Power Gain @ 2110 MHz | 14.6 | dB |
Effciency @ 2110 MHz | 55.5 | % |
ACPR @ 2110 MHz | -35.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH27A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2496 MHz to 2690 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2496 | MHz |
Frequency (Max.) | 2690 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 49.9 | dBm |
Power Gain @ 2600 MHz | 15.9 | dB |
Effciency @ 2600 MHz | 56.5 | % |
ACPR @ 2600 MHz | -32.5 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH36A-70N is a 70 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 48.1 | dBm |
Power Gain @3500MHz | 15.4 | dB |
Efficiency @ 3500 MHz | 53.5 | % |
| ACPR @ 3500 MHz | -31.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.3 V, Pout = 39.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG1PH36A-100N is a 100 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 3300 | MHz |
Frequency (Max.) | 3800 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 50.2 | dBm |
Power Gain @ 3500 MHz | 15.8 | dB |
Effciency @ 3500 MHz | 54.3 | % |
ACPR @ 3500 MHz | -32.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.2 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH50B-20N is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4400 | MHz |
Frequency (Max.) | 5000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 42.8 | dBm |
Power Gain @4900MHz | 16.0 | dB |
Efficiency @ 4900 MHz | 47.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH50A-90N is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4800 | MHz |
Frequency (Max.) | 5000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 49.6 | dBm |
Power Gain @4880MHz | 12.5 | dB |
Efficiency @ 4880 MHz | 48.3 | % |
| ACPR @ 4880 MHz | -32.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 60 mA, VGSB = - 5.6 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first eneration RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 42.2 | dBm |
Power Gain @3500MHz | 15.4 | dB |
Efficiency @ 3500 MHz | 41.8 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.
DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station
applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 46.4 | dBm |
Power Gain @ 1842 MHz | 21.3 | dB |
Effciency @ 1842 MHz | 31.4 | % |
ACPR @ 1842 MHz | -44 | dBC |
Note: Above Performance is the typical Doherty single-Carrier W-CDMA performance in Dynax’s demo with the device soldered onto the heat sink, Test condition: VDD = 48 V, IDQA = 20 mA, VGSB = - 4.2 V, Pout = 2.0 W Avg., Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF.
DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station
applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 47.8 | dBm |
Power Gain @ 1842 MHz | 19.5 | dB |
Effciency @ 1842 MHz | 55.0 | % |
ACPR @ 1842 MHz | -30.0 | dBC |
Note: Above Performance is the typical Doherty single-Carrier W-CDMA performance in Dynax’s demo with the device soldered onto the heat sink,
Test condition:
VDD = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 10.0 W Avg., Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.
CN
