DXG1PH22A-120N is a 120 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1805 MHz to 2170 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 1805 | MHz |
Frequency (Max.) | 2170 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 50.8 | dBm |
Power Gain @ 2110 MHz | 14.6 | dB |
Effciency @ 2110 MHz | 55.5 | % |
ACPR @ 2110 MHz | -35.0 | dBC |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.35 V, Pout = 42.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
CN
