DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 40.3 | dBm |
Power Gain @3500 MHz | 20.2 | dB |
Efficiency @3500 MHz | 32.3 | % |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.
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