DF2G0007-16N is a 16 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 30 to 700 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 30 | MHz |
Frequency (Max.) | 700 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat@325 MHz | 41.1 | dBm |
Power Gain@325 MHz | 19.4 | dB |
Efficiency@325 MHz | 69.5 | % |
Note: Measured in the DF2G0007-16N application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pout=39dBm，Pulse width = 100 μs, Duty cycle = 10 %.
CN
