DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2435 MHz | 55.3 | dBm |
Power Gain2 @ 2435 MHz | 14.6 | dB |
Efficiency2 @ 2435 MHz | 73.6 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS=-4.8V
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