DF2H0040-135DF_Dynax Semiconductor, Inc.

DF2H0040-135DF

Brief description for the product

Data manual
Application scheme
Application Manual
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2H0040-135DF is a 135 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	4000	MHz
Supply Voltage (Typ.)	48	V
Psat¹ @ 2500 MHz	50.5	dBm
Power Gain²@ 2500 MHz	18.3	dB
Efficiency² @ 2500 MHz	77.4	%

Note: Measured in the DF2H0040-135DF application circuit, test condition: VDS = 48 V, IDQ = 360 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.