DF1H0015-900EF is a 900 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat @ 910 MHz | 58.7 | dBm |
Power Gain1 @ 910 MHz | 18.6 | dB |
Efficiency1 @ 910 MHz | 68.8 | % |
Note:Measured in the DF1H0015-900EF application circuit, test condition: VDS = 50 V, IDQ = 600 mA.
1. Test condition: Based on Pout = 58 dbm.
CN
