DF2H0014-175CF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 1400 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 990 MHz | 52.8 | dBm |
Power Gain2 @ 990 MHz | 18.2 | dB |
Efficiency2 @ 990 MHz | 67.0 | % |
Note: Measured in the DF2H0014-175CF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.
1. The output power is saturated power.
2. Test condition: Based on Pout. = 175W.
CN
