DF2H0026-650FF is a 650 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 2600 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 678 MHz | 56 | dBm |
Power Gain2 @ 678 MHz | 24.5 | dB |
Efficiency2 @ 678 MHz | 62.9 | % |
Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 48 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. The output power is saturated power.
2. Test condition: Based on rollback gain @ 50 dbm.
CN
