DXG1CH59B-30DF is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 5000 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat | 55 | dBm |
Power Gain | 16 | dB |
Efficiency | 30 | % |
Note: Measured in the DXG1CH59B-30DF application circuit, test condition: VDS = 48 V, IDQ = 80 mA, Pavg = 9 W,Pulse width = 100 μs, Duty cycle = 10 %.
CN
