DF2G0060-10DF is a 10 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat1 @ 2600 MHz | 42.1 | dBm |
Power Gain2 @ 2600 MHz | 17.5 | dB |
Efficiency2 @ 2600 MHz | 77.2 | % |
Note: Measured in the DF2G0060-10DF application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
CN
