DF2G0030-120DF_Dynax Semiconductor, Inc.

DF2G0030-120DF

Brief description for the product

Data manual
Application scheme
Application Manual
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0030-120DF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	3000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 2500 MHz	51.4	dBm
Power Gain² @ 2500 MHz	15.3	dB
Efficiency² @ 2500 MHz	82.3	%

Note: Measured in the DF2G0030-120DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.