DF2G0060-25DF_Dynax Semiconductor, Inc.

DF2G0060-25DF

Brief description for the product

Data manual
Application scheme
Application Manual
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G0060-25DF is a 25 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 2600 MHz	45.7	dBm
Power Gain² @ 2600 MHz	12.8	dB
Efficiency² @ 2600 MHz	78	%

Note: Measured in the DF2G0060-25DF application circuit, test condition: VDS = 28 V, IDQ = 80 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.