DF2G1020-120CF_Dynax Semiconductor, Inc.

DF2G1020-120CF

Brief description for the product

Data manual
Application scheme
Application Manual
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2G1020-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1000 to 2000 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	6000	MHz
Supply Voltage (Typ.)	28	V
Psat¹ @ 1800 MHz	51	dBm
Power Gain² @ 1800 MHz	19.3	dB
Efficiency² @ 1800 MHz	69	%

Note: Measured in the DF2G1020-120CF application circuit, test condition: VDS = 28 V, IDQ = 450 mA, Pulse width = 100 μs, Duty cycle = 10 %.

1. Test condition: Based on Maximum Output Power.

2. Test condition: Based on Maximum Drain Efficiency.