DF2H0014-350EF_Dynax Semiconductor, Inc.

DF2H0014-350EF

Brief description for the product

Data manual
Application scheme
Application Manual
- AN_02-User Guide for GaN HEMT Transistor(V04)
- AN_05-Thermal Performance Guide for RF Power Amplifiers(V03)

DF2H0014-350EF is a 350 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

Parameter	Value	Unit
Frequency (Min.)	0	MHz
Frequency (Max.)	1400	MHz
Supply Voltage (Typ.)	48	V
Psat¹ @ 990 MHz	55.8	dBm
Power Gain² @ 990 MHz	18.2	dB
Efficiency² @ 990 MHz	67.0	%

Note: Measured in the DF2H0014-350DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

1. The output power is saturated power.

2. Test condition: Based on Pout. = 350 W.