DF2G4460-30DF2 is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4400 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat @ 5000 MHz | 46 | dBm |
Power Gain @ 5500 MHz | 9.5 | dB |
Efficiency @ 5500 MHz | 66.6 | % |
Note: Measured in the DF2G440-30DF2 application circuit, test condition: VDS = 28 V, IDQ = 200 mA,
CN
