DF2G5060-140EF2 is a 140 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 5000 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat @ 5000 MHz | 50.5 | dBm |
Power Gain @ 5000 MHz | 9.7 | dB |
Efficiency @ 5000 MHz | 63.3 | % |
Note: Measured in the DF2G5060-140EF2 application circuit, test condition: VDS = 28 V, IDQ = 100 mA,
CN
