DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 20 | MHz |
| Frequency (Max.) | 1500 | MHz |
| Supply Voltage (Typ.) | 28 | V |
| Psat@325 MHz | 39.7 | dBm |
| Power Gain @ 325 MHz | 17.5 | dB |
| Efficiency @ 325 MHz | 63.8 | % |
Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.
CN
