| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DF2H0014-175DF | 400F1 | DC~1400 | 175 | 52.8 | 67.0 | 18.2 | Engineering Sample | |
| DF2H0014-175CF | 400P1 | DC~1400 | 175 | 52.8 | 67.0 | 18.2 | Engineering Sample | |
| DF1H0015-900EF | 780P2 | DC~1500 | 900 | 58.7 | 74.5 | 17.4 | Engineering Sample | |
| DF2H0040-185DF | 360F1 | DC~4000 | 185 | 53.7 | 73.6 | 15.1 | Engineering Sample | |
| DF2H0040-135DF | 360F1 | DC~4000 | 135 | 51.6 | 78.5 | 19.0 | Engineering Sample | |
| DF2H0040-95DF | 360F1 | DC~4000 | 95.0 | 50.5 | 77.4 | 18.3 | Engineering Sample | |
| DF2H0060-45CF | 200P1 | DC~6000 | 45.0 | 47.5 | 75.5 | 19.3 | Engineering Sample | |
| DF2H0060-20DF | 200F1 | DC~6000 | 20.0 | 44.7 | 76.5 | 20.0 | Engineering Sample | |
| DF2H0060-20CF | 200P1 | DC~6000 | 20.0 | 44.7 | 76.5 | 20.0 | Engineering Sample | |
| DF1G0015-08N | LGA 4mm×4mm | 20~1500 | 8.0 | 39.4 | 59.4 | 17.2 | Engineering Sample |
DF2H0014-175DF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 1400 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 990 MHz | 52.8 | dBm |
Power Gain2 @ 990 MHz | 18.2 | dB |
Efficiency2 @ 990 MHz | 67.0 | % |
Note: Measured in the DF2H0014-175DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.
1. The output power is saturated power.
2. Test condition: Based on Pout. = 175W.
DF2H0014-175CF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 1400 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 990 MHz | 52.8 | dBm |
Power Gain2 @ 990 MHz | 18.2 | dB |
Efficiency2 @ 990 MHz | 67.0 | % |
Note: Measured in the DF2H0014-175CF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.
1. The output power is saturated power.
2. Test condition: Based on Pout. = 175W.
DF1H0015-900EF is a 900 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat @ 910 MHz | 58.7 | dBm |
Power Gain1 @ 910 MHz | 18.6 | dB |
Efficiency1 @ 910 MHz | 68.8 | % |
Note:Measured in the DF1H0015-900EF application circuit, test condition: VDS = 50 V, IDQ = 600 mA.
1. Test condition: Based on Pout = 58 dbm.
DF2H0040-185DF is a 185 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 53.7 | dBm |
Power Gain2 @ 2600 MHz | 15.1 | dB |
Efficiency2 @ 2600 MHz | 73.6 | % |
Note: Measured in the DF2H0040-185DF application circuit, test condition: VDS = 48 V, IDQ = 400 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2H0040-135DF is a 135 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2500 MHz | 50.5 | dBm |
Power Gain2 @ 2500 MHz | 18.3 | dB |
Efficiency2 @ 2500 MHz | 77.4 | % |
Note: Measured in the DF2H0040-135DF application circuit, test condition: VDS = 48 V, IDQ = 360 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2H0040-95DF is a 95 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2500 MHz | 50.5 | dBm |
Power Gain2 @ 2500 MHz | 18.3 | dB |
Efficiency2 @ 2500 MHz | 77.4 | % |
Note: Measured in the DF2H0040-95DF application circuit, test condition: VDS = 48 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2H0060-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 47.5 | dBm |
Power Gain2 @ 2600 MHz | 19.3 | dB |
Efficiency2 @ 2600 MHz | 75.5 | % |
Note: Measured in the DF2H0060-45CF application circuit, test condition: VDS = 48 V, IDQ = 80 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2H0060-20DF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 44.7 | dBm |
Power Gain2 @ 2600 MHz | 20 | dB |
Efficiency2 @ 2600 MHz | 76.5 | % |
Note: Measured in the DF2H0060-20DF application circuit, test condition: VDS = 48 V, IDQ = 50 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF2H0060-20CF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 44.7 | dBm |
Power Gain2 @ 2600 MHz | 20 | dB |
Efficiency2 @ 2600 MHz | 76.5 | % |
Note: Measured in the DF2H0060-20CF application circuit, test condition: VDS = 48 V, IDQ = 50 mA, Pulse width = 100 μs, Duty cycle = 10 %.
1. Test condition: Based on Maximum Output Power.
2. Test condition: Based on Maximum Drain Efficiency.
DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz.
| Parameter | Value | Unit |
| Frequency (Min.) | 20 | MHz |
| Frequency (Max.) | 1500 | MHz |
| Supply Voltage (Typ.) | 28 | V |
| Psat@325 MHz | 39.7 | dBm |
| Power Gain @ 325 MHz | 17.5 | dB |
| Efficiency @ 325 MHz | 63.8 | % |
Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.
CN
