DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat (Typ.) | 57.4 | dBm |
Power Gain @ 2450 MHz | 14.7 | dB |
Efficiency @ 2450 MHz | 73.5 | % |
Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS = - 4.8 V, test signal is CW.
CN
